Terahertz (THz) and Sub-THz Science
and Technology (J. Dutta)
The response of materials to electromagnetic waves
in the millimeter (mm) and sub-millimeter (smm) wavelength range (from
approximately 50 to 500 GHz) has received relatively little study.
An understanding of the nature and origin of absorption in materials
at these wavelengths has basic significance for solid state physics
as well as importance for RF technology. Current emphasis is on the
experimental determination of the predominant mechanisms of absorption
for millimeter and submillimeter electromagnetic waves in high gap
semiconductors, especially CVD diamond and SiC. In order to identify
the impurities or defects that give rise to the excess loss, temperature-dependent
conductivity and DLTS measurements are being undertaken on candidate
materials. Dielectric loss measurements over a wide range of temperatures
and frequencies are performed to verify the results obtained from
electrical methods and help to determine the primary loss mechanisms
for the materials under investigations. Shown below is a system comprised
of a BWO source, a high Q resonator, and a spectrum analyzer used
to measure losses as 10-6 in the submillimeter wavelength regime.
Some recent publications:
1. “Characterization of Low loss Materials,” J.M.Dutta
and C.R. Jones, Materials, Integration and Packaging Issues for High-Frequency
Devices II, Eds. Yong S. Cho, Don Shiffler, Clive A. Randall, Harrie
A.C.Tilmans, and Takaaki Tsurumi, MRS Volume 833, 2005.
2. “The Mechanisms of Absorption in High-Gap Semiconductors
at Millimeter and submillimeter Wavelengths,” J. M. Dutta, G.
Yu, and C. R. Jones, Proc. 32nd Int. Conf. on IRMMW and 15th Int.
Conf. on THz Electronics, Cardiff, UK 2007
3. “Synchronization of a Millimeter-wave BWO With a Spectrum
Analyzer Via A Simple Phaselock System,” Proc. 32nd Int. Conf.
on IRMMW and 15th Int. Conf. on THz Electronics, Cardiff, UK 2007
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